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Preliminary Technical Information
TrenchT2 TM Power
MOSFET
IXTH260N055T2
V DSS
I D25
R DS(on)
= 55V
= 260A
≤ 3.3m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-247
Symbol
Test Conditions
Maximum Ratings
V DSS
T J = 25 ° C to 175 ° C
55
V
V DGR
V GSM
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Transient
55
± 20
V
V
G
D
S
(TAB)
I D25
T C = 25 ° C
260
A
I LRMS
I DM
I A
E AS
P D
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
160
780
100
600
480
A
A
A
mJ
W
G = Gate
S = Source
Features
D = Drain
TAB = Drain
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
° C
° C
° C
International standard package
175°C Operating Temperature
High current handling capability
Avalanche rated
T L
T sold
M d
Weight
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
300
260
1.13 / 10
6
° C
° C
Nm/lb.in.
g
Low R DS(on)
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
BV DSS V GS = 0V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
55 V
Applications
Automotive
- Motor Drives
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS
V GS = 0V
T J = 150 ° C
2.0
4.0
± 200
5
150
V
nA
μ A
μ A
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching Applications
R DS(on)
V GS = 10V, I D = 50A, Notes 1, 2
3.3 m Ω
? 2008 IXYS CORPORATION, All rights reserved
DS100078(11/08)
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